Specifikáció:
Manufacturer: Toshiba
Product Category: MOSFET
RoHS: yes
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 650 V
Id - Continuous Drain Current: 6 A
Rds On - Drain-Source Resistance: 1.11 Ohms
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 20 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 45 W
Channel Mode: Enhancement
Tradename: MOSVII
Series: TK6A65D
Packaging: Tube
Brand: Toshiba
Configuration: Single
Product Type: MOSFET
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
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