Specifikáció:
Manufacturer: NXP
Product Category: Bipolar Transistors - BJT
Mounting Style: Through Hole
Package/Case: TO-126
Transistor Polarity: PNP
Configuration: Single
Collector- Emitter Voltage VCEO Max: - 60 V
Collector- Base Voltage VCBO: - 60 V
Emitter- Base Voltage VEBO: - 5 V
Collector-Emitter Saturation Voltage: - 500 mV
Maximum DC Collector Current: - 1.5 A
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 1.25 W
Gain Bandwidth Product fT: 160 MHz
Minimum Operating Temperature: -
Series: BD138
Packaging: Tube
Continuous Collector Current: - 1.5 A
DC Collector/Base Gain hFE Min: 63
DC Current Gain hFE Max: 250
Product Type: BJTs - Bipolar Transistors
Subcategory: Transistors
Technology: Si
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