Specifikáció:
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 25 W
Maximum Drain-Source Voltage |Vds|: 180 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 1 A
Maximum Junction Temperature (Tj): 150 °C
Drain-Source Capacitance (Cd): 90 pF
Maximum Drain-Source On-State Resistance (Rds): 3 Ohm
Package: TO-126
A termék használati útmutatója itt megtekinthető.
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