Specifikáció:
Manufacturer: IR
Product Category: MOSFET
RoHS: yes
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 200 V
Id - Continuous Drain Current: 11 A
Rds On - Drain-Source Resistance: 500 mOhms
Vgs - Gate-Source Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 44 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 125 W
Channel Mode: Enhancement
Packaging: Tube
Configuration: Single
Series: IRF
Transistor Type: 1 P-Channel
Forward Transconductance - Min: 4.1 S
Fall Time: 38 ns
Product Type: MOSFET
Rise Time: 43 ns
Factory Pack Quantity: 50
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 39 ns
Typical Turn-On Delay Time: 14 ns
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