Specifikáció:
Manufacturer: Infineon
Product Category: MOSFET
RoHS: yes
Technology: Si
Mounting Style: SMD/SMT
Package/Case: TO-252-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 60 V
Id - Continuous Drain Current: 99 A
Rds On - Drain-Source Resistance: 6.8 mOhms
Vgs - Gate-Source Voltage: 16 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
Qg - Gate Charge: 33 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 143 W
Configuration: Single
Channel Mode: Enhancement
Packaging: Cut Tape
Transistor Type: 1 N-Channel
Brand: Infineon / IR
Forward Transconductance - Min: 31 S
Fall Time: 69 ns
Product Type: MOSFET
Rise Time: 216 ns
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 43 ns
Typical Turn-On Delay Time: 45 ns
A termék bővebb angol nyelvű leírása itt megtekinthető.
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