Specifikáció:
Manufacturer: NXP
Product Category: Bipolar Transistors - BJT
Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 300 V
Collector- Base Voltage VCBO: 300 V
Emitter- Base Voltage VEBO: 5 V
Maximum DC Collector Current: 0.3 A
Pd - Power Dissipation: 1250 mW
Gain Bandwidth Product fT: 90 MHz
Maximum Operating Temperature: + 150 C
Technology: Si
Brand: NXP Semiconductors
DC Collector/Base Gain hFE Min: 30 at 30 mA, 10 V
Product Type: BJTs - Bipolar Transistors
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