Specifikáció:
Product Category: Bipolar Transistors - BJT
RoHS: yes
Mounting Style: Through Hole
Package/Case: TO-92-3
Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 25 V
Collector- Base Voltage VCBO: 25 V
Emitter- Base Voltage VEBO: 5 V
Maximum DC Collector Current: 2 mA
Pd - Power Dissipation: 625 mW
Gain Bandwidth Product fT: 120 MHz
Series: 2N3392
Packaging: Bulk
Technology: Si
Continuous Collector Current: 0.45 A
DC Collector/Base Gain hFE Min: 150
Product Type: BJTs - Bipolar Transistors
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