Specifikáció:
Manufacturer: Toshiba Semiconductor and Storage
Series: U-MOSVI-H
Packaging: Cut Tape (CT)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain: (Id) @ 25°C 28A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
Vgs (Max): +/- 20V
Input Capacitance (Ciss) (Max) @ Vds 7540pF @ 10V
FET Feature: -
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN
A termék adatlapja itt megtekinthető.
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