Specifikáció:
Manufacturer: Infineon
Product Category: MOSFET
RoHS: yes
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-247-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 200 V
Id - Continuous Drain Current: 94 A
Rds On - Drain-Source Resistance: 23 mOhms
Vgs - Gate-Source Voltage: 30 V
Qg - Gate Charge: 180 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Configuration: Single
Pd - Power Dissipation: 580 W
Channel Mode: Enhancement
Packaging: Tube
Transistor Type: 1 N-Channel
Brand: Infineon Technologies
Forward Transconductance - Min: 39 S
Fall Time: 79 ns
Product Type: MOSFET
Rise Time: 160 ns
Factory Pack Quantity: 25
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 43 ns
Typical Turn-On Delay Time: 23 ns
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