specifikáció:
Manufacturer: Toshiba
Product Category:Bipolar Transistors - BJT
Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 800 V
Collector- Base Voltage VCBO: 1700 V
Emitter- Base Voltage VEBO: 5 V
Maximum DC Collector Current: 28 A
Gain Bandwidth Product fT: 2 MHz
Maximum Operating Temperature: + 150 C
Series: 2SC5570
Brand: Toshiba
DC Collector/Base Gain hFE Min: 22 at 2 A at 5 V
Pd - Power Dissipation: 220000 mW
Product Type: BJTs - Bipolar Transistors
Factory Pack Quantity: 100
Subcategory: Transistors
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