Specifikáció:
Manufacturer: ON Semiconductor
Product Category: IGBT Transistors
RoHS: yes
Technology: Si
Package/Case: TO-247
Mounting Style: Through Hole
Configuration: Single
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2 V
Maximum Gate Emitter Voltage: 20 V
Continuous Collector Current at 25 C: 50 A
Pd - Power Dissipation: 192 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Series: NGTB25N120FL
Packaging: Tube
Brand: ON Semiconductor
Gate-Emitter Leakage Current: 100 nA
A termék leírása itt megtekinthető.
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