MEDIUM POWER SILICON NPN PLANAR TRANSISTOR
FEATURES
VCEO = 40V
IC = 0.7A
Ptot = 5W
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO - Collector ? Base Voltage: 60V
VCEO - Collector ? Emitter Voltage:40V
VCER - Collector ? Emitter Sustaining Voltage: 50V
VCEX - Collector - Emiiter Voltage: 60V
VEBO - Emitter-Base Voltage: 5V
IC - Collector Current: 0.7A
PTOT - Power Dissipation
Tamb = 25°C : 1W
Tcase = 25°C: 5W
Tj - Junction Temperature: 200°C
Tstg - Storage Temperature:?65 to 200°C
Rth(jc) - Thermal Resistance Junction to Case: 35°C / W
Rth(ja) - Thermal Resistance Junction to Ambient: 175°C / W
A termék bővebb angol nyelvű leírása itt megtekinthető.
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