Specifikáció:
Manufacturer: Diodes Incorporated
Product Category: Bipolar Transistors - BJT
Transistor Polarity: PNP
Configuration: Single
Collector- Emitter Voltage VCEO Max: 150 V
Collector- Base Voltage VCBO: 160 V
Emitter- Base Voltage VEBO: 5 V
Maximum DC Collector Current: 0.6 A
Gain Bandwidth Product fT: 300 MHz
Maximum Operating Temperature: + 150 C
Brand: Diodes Incorporated
DC Collector/Base Gain hfe Min: 50 at 1 mA at 5 V
Minimum Operating Temperature: - 55 C
Pd - Power Dissipation: 625 mW
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