specifikáció:
Product Category: Power MOSFET
Material: Si
Configuration: Single
Channel Mode: Enhancement
Channel Type: N
Number of Elements per Chip: 1
Maximum Drain Source Voltage (V): 180
Maximum Gate Source Voltage (V): +/-20
Maximum Continuous Drain Current (A): 1
Typical Input Capacitance @ Vds (pF): 170@10V
Maximum Power Dissipation (mW): 25000
A termék bővebb leírása itt megtekinthető.
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