Specifikáció:
Manufacturer: Infineon
Product Category: MOSFET
RoHS: yes
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage:
200 V
Id - Continuous Drain Current: 31 A
Rds On - Drain-Source Resistance: 82 mOhms
Vgs th - Gate-Source Threshold Voltage: 5.5 V
Vgs - Gate-Source Voltage: 30 V
Qg - Gate Charge: 70 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 200 W
Configuration: Single
Channel Mode: Enhancement
Packaging: Tube
Transistor Type: 1 N-Channel
Brand: Infineon Technologies
Forward Transconductance - Min: 17 S
Fall Time: 10 ns
Product Type: MOSFET
Rise Time: 38 ns
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 26 ns
Typical Turn-On Delay Time: 16 ns
A termék adatlapja itt megtekinthető
|
|