Specifikáció:
Manufacturer: Infineon
Product Category:IGBT Transistors
RoHS: yes
Technology: Si
Package/Case: TO-220-3
Mounting Style: Through Hole
Configuration: Single
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 2.05 V
Maximum Gate Emitter Voltage: +/- 20 V
Continuous Collector Current at 25 C: 40 A
Pd - Power Dissipation: 215 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Packaging: Tube
Continuous Collector Current Ic Max: 40 A
Brand: Infineon Technologies
Gate-Emitter Leakage Current: 100 nA
Product Type: IGBT Transistors
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