Specifikáció:
Manufacturer: NXP Semiconductors
Category: Transistor (BJT) - Discrete
Channels: 1
Type: NPN
IC: 5 A
Collector emitter voltage U(CEO): 700 V
Collector-emitter saturation voltage (max.): 5 V
Collector cutoff current: 136 mA
Ptot: 45 W
DC current gain (hFE): 3.8
DC current gain hFE - reference current: 3 A
DC current gain hFE - reference voltage: 5 V
Transit frequency f(T): 1 MHz
Mounting type: Through-hole
Packeage: TO-399
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