Field Effect Transistor
Silicon N Channel MOS Type (pi-MOS III.5)
High Speed, High Current DC-DC Converter,
Relay Drive and Motor Drive Applications
Features
- Low Drain-Source ON Resistance
- RDS(ON)= 0.15 Ohm(Typ.)
- High Forward Transfer Admittance
- Yfs = 21S (Typ.)
- Low Leakage Current
- IDSS = 300 uA (Max.) @ VDS= 500V
- Enhancement-Mode
- Vth = 1.5 ~ 3.5V @ VDS = 10V, ID= 1mA
Absolute Maximum Ratings (Ta = 25°C):
Drain-Source Voltage VDSS 500 V
Drain-Gate Voltage (RGS= 20kOhm) VDGR
500 V
Gate-Source Voltage VGSS ? 30 V
Drain Current DC ID 25 A
Drain Current Pulse IDP 100 A
Drain Power Dissipation (Tc = 25°C): PD 200 W
Channel Temperature Tch 150°C
Storage Temperature Range Tstg -55 ~ 150°C
|
|
;)
