Chopper Regulator, DC−DC Converter and Motor Drive Applications
- Low drain−source ON resistance : RDS (ON) = 1.0 Ω (typ.)
- High forward transfer admittance : |Yfs| = 3.7 S (typ.)
- Low leakage current : IDSS = −100 μA (max) (VDS = −250 V)
- Enhancement mode : Vth = −1.5~−3.5 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Drain−source voltage VDSS: −250 V
Drain−gate voltage (RGS = 20 kΩ) VDGR: −250 V
Gate−source voltage VGSS: ? 20 V
Drain current - DC (Note 1): ID −5 A
- Pulse (Note 1): IDP −20 A
Drain power dissipation (Tc = 25°C): PD 30 W
Single pulse avalanche energy(Note 2): EAS 155 mJ
Avalanche current IAR: −5 A
Repetitive avalenche energy (Note 3) EAR: 3.0 mJ
Channel temperature Tch: 150 °C
Storage temperature range Tstg: −55~150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (?Handling Precautions?/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = −50 V, Tch = 25°C (initial), L = 10.5 mH, RG = 25 Ω, IAR = −5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
|
|