DESCRIPTION
The 2SJ449 is P-Channel MOS Field Effect Transistor designed
for high voltage switching applications.
FEATURES
- Low On-Resistance
RDS(on) = 0.8 W MAX. (@ VGS = -10 V, ID = -3.0 A)
- Low Ciss Ciss = 1040 pF TYP.
- High Avalanche Capability Ratings
- Isolated TO-220 Package
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage VDSS: -250 V
Gate to Source Voltage VGSS: ? 30 V
Drain Current (DC) ID(DC): ? 6.0 A
Drain Current (pulse)* ID(pulse): ? 24 A
Total Power Dissipation (Tc = 25 °C): PT1 35 W
Total Power Dissipation (TA = 25 °C): PT2 2.0 W
Channel Temperature Tch: 150 °C
Storage Temperature Tstg: -55 to +150 °C
Single Avalanche Current**: IAS -6.0 A
Single Avalanche Energy**: EAS 180 mJ
* PW < 10 ms, Duty Cycle < 1 %
** Starting Tch = 25 °C, RG = 25 W, VGS = -20 V --> 0
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