Specifikáció:
Manufacturer: Toshiba
Product Category: MOSFET
RoHS: yes
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-3PL
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Vds - Drain-Source Breakdown Voltage: - 200 V
Id - Continuous Drain Current: - 12 A
Rds On - Drain-Source Resistance: 625 mOhms
Vgs - Gate-Source Voltage: 20 V
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Configuration: Single
Pd - Power Dissipation: 150 W
Channel Mode: Enhancement
Packaging: Tube
Transistor Type: 1 P-Channel
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