Specifikáció:
Product Category: Bipolar Transistors - BJT
Manufacturer: Toshiba
RoHS: RoHS Compliant
Mounting Style: Through Hole
Package/Case: TO-3P
Transistor Polarity: PNP
Configuration: Single
Collector- Emitter Voltage VCEO Max: 230 V
Collector- Base Voltage VCBO: 230 V
Emitter- Base Voltage VEBO: 5 V
Maximum DC Collector Current: 15 A
Gain Bandwidth Product fT: 30 MHz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Series: 2SA1943
Brand: Toshiba
DC Collector/Base Gain hFE Min: 80
Pd - Power Dissipation: 150 W
A termék bővebb leírása itt megtekinthető.
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