Specifikáció:
Product Category: Bipolar Transistors - BJT
Technology: Si
Mounting Style: Through Hole
Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 45 V
Collector- Base Voltage VCBO: 50 V
Emitter- Base Voltage VEBO: 6 V
Collector-Emitter Saturation Voltage:
0.25 V
Maximum DC Collector Current: 200 mA
Gain Bandwidth Product fT: 15 MHz
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 150 C
Packaging: Bulk
Continuous Collector Current: 100 mA
DC Collector/Base Gain hFE Min: 180 at 2mA, 5 V
Pd - Power Dissipation: 300 mW
A termék adatlapja itt megtekinthető.
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