Specifikáció:
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 0.2 W
Maximum Drain-Source Voltage |Vds|: 50 V
Maximum Gate-Source Voltage |Vgs|: 8 V
Maximum Drain Current |Id|: 0.2 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 8 nS
Drain-Source Capacitance (Cd): 6 pF
Maximum Drain-Source On-State Resistance (Rds): 1.6 Ohm
Package: UMT3_SC70_SOT323
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