Specifikáció:
Manufacturer: TOSHIBA
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 40
Maximum collector-base voltage |Ucb|, V: 300
Maximum collector-emitter voltage |Uce|, V: 150
Maximum emitter-base voltage |Ueb|, V: 6
Maximum collector current |Ic max|, A: 7
Maksimum temperature (Tj), °C: 150
Transition frequency (ft), MHz: 18
Forward current transfer ratio (hFE), min: 10
Noise Figure, dB: -
Package of 2SD1069 transistor: TO220
A termék bővebb angol nyelvű leírása itt megtekinthető.
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