Specifikáció:
Type Designator: BSX29
Material of transistor: Si
Polarity: PNP
Maximum collector power dissipation (Pc): 0.36 W
Maximum collector-base voltage |Ucb|: 12 V
Maximum collector-emitter voltage |Uce|: 12 V
Maximum emitter-base voltage |Ueb|: 4 V
Maximum collector current |Ic max|: 0.2 A
Max. temperature (Tj): 200 °C
Transition frequency (ft): 700 MHz
Forward current transfer ratio (hFE), min: 30
Noise Figure, dB: -
Package of BSX29 transistor: TO18
Storage and Junction Temperature: -60 to 200 °C
A termék adatlapja itt megtekinthető.
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