Specifikáció:
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc): 34 W
Maximum collector-base voltage |Ucb| : 1500 V
Maximum collector-emitter voltage |Uce|: 700 V
Maximum collector current |Ic max|: 8 A
Maximum temperature (Tj): 150 °C
Transition frequency (ft): 7 MHz
Collector capacitance (Cc): 125 pF
Forward current transfer ratio (hFE), min: 10
Noise Figure, dB: -
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