Specifikáció:
Product Category: IGBT Transistors
Manufacturer: Infineon
RoHS: RoHS Compliant
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 1.95 V
Maximum Gate Emitter Voltage: 20 V
Continuous Collector Current at 25 C: 80 A
Diode forward current If at 25 C: 40A
Gate-Emitter Leakage Current: 100 nA
Pd - Power Dissipation: 306 W
Mounting Style: Through Hole
Package/Case: TO-247-3
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 150 C
Packaging: Tube
Brand: Infineon Technologies
Continuous Collector Current Ic Max: 80 A
Series: IKW40N60
A termék leírása itt megtekinthető.
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