Specifikáció:
Maximum power dissipation (Pd),: 25 W
Maximum drain-source voltage |Uds|,: 90 V
Maximum gate-source voltage |Ugs|,: 15 V
Maximum drain current |Id|,: 2 A
Maximum junction temperature (Tj),: 150 °C
Rise Time of 2N6658 transistor (tr), nS: 5
Drain-source Capacitance (Cd), pF: 50
Maximum drain-source on-state resistance (Rds), Ohm: 4
Package: TO3
|
|