Specifikáció:
Product Category: MOSFET
Brand: Infineon Technologies
Id - Continuous Drain Current: 20.7 A
Vds - Drain-Source Breakdown Voltage: 650 V
Rds On - Drain-Source Resistance: 190 mOhms
Transistor Polarity: N-Channel
Vgs - Gate-Source Breakdown Voltage: 20 V
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 208 W
Mounting Style: Through Hole
Package/Case: TO-247-3
Channel Mode: Enhancement
Fall Time: 4.5 ns
Minimum Operating Temperature: - 55 C
Rise Time: 5 ns
A termék adatlapja itt megtekinthető.
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