Specifications, Features, Applications
Electrostatic sensitive device. Observe precautions for handling.
Applications:
RF amplifier up to GHz range specially for wide band antenna amplifier.
Features:
D High power gain D Low noise figure D High transition frequency
BFR96TS Marking: BFR96TS Plastic case (TO 1 = Collector, 2 = Emitter, 3 = Base
Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value to +150 Unit mW °C
Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board 1.5) mm3 plated with 35mm Cu Symbol RthJA Value 150 Unit K/W
Tamb = 25_C, unless otherwise specified Parameter Collector cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage DC forward current transfer ratio Test Conditions VCE 20 V, VBE = 0 VCB = 0 VEB = 5 mA, = 0 VCE 70 mA Symbol Min Typ Max Unit ICES 100 mA ICBO 100 nA IEBO 10 mA V(BR)CEO 15 V hFE 75 150
Tamb = 25_C, unless otherwise specified Parameter Transition frequency Collector-base capacitance Collector-emitter capacitance Emitter-base capacitance Noise figure Test Conditions VCE = 70 mA, = 500 MHz VCB = 1 MHz VCE = 1 MHz VEB = 1 MHz VCE = 70 mA, = 500 MHz VCE = 70 mA, = 800 MHz VCE = 70 mA, ZL = ZLopt, = 800 MHz VCE = 70 mA, dIM = 60 dB, = 806 MHz, = 810 MHz, = 50 VCE = 70 mA, = 800 MHz Symbol fT Ccb Cce Ceb F Gpe = V2 Min Typ Max Unit GHz dB mV
Power gain Linear output voltage two tone intermodulation test Third order intercept point
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