Specifikáció:
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 350 V
Maximum Collector-Emitter Voltage |Vce|: 325 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 250 pF
Forward Current Transfer Ratio (hFE)
Noise Figure, dB: -
Package: TO66
A termék bővebb angol nyelvű leírása itt megtekinthető.
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