Specifikáció:
MOSFET, DUAL, PP, SUPERSOT-6
Transistor Polarity: P Channel
Continuous Drain Current Id: 3A
Drain Source Voltage Vds: 30V
On Resistance Rds(on): 170mohm
Rds(on) Test Voltage Vgs: -10V
Threshold Voltage Vgs Typ: -1.8V
Power Dissipation Pd: 960mW
Transistor Case Style: SuperSOT
No. of Pins: 6
Continuous Drain Current Id, P Channel: -1.8A
Current Id Max: 1.8A
Drain Source Voltage Vds, P Channel: -30V
Module Configuration: Dual
No. of Transistors: 2
On Resistance Rds(on), P Channel: 0.14ohm
Package / Case: SuperSOT-6
Power Dissipation Pd: 960mW
Power Dissipation Pd: 960mW
Pulse Current Idm: 10A
SMD Marking: FDC6506P
Uni / Bi Directional Polarity: PP
Voltage Vds: 30V
Voltage Vds Typ: 30V
Voltage Vgs Max: -1.8V
Voltage Vgs Rds on Measurement: -10V
Voltage Vgs th Max: -3V
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